FDN352AP Datasheet (ON Semiconductor)

FDN352AP, P-Channel MOSFET

This P *Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for low voltage and battery

FDN352AP Features

* 1.3 A,

* 30 V RDS(ON) = 180 mW @ VGS =

* 10 V

* 1.1 A,

* 30 V RDS(ON) = 300 mW @ VGS =

* 4.5 V

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power Version of Industry Standard SOT

* 23 Packa