FDN357N Datasheet (Fairchild Semiconductor)

FDN357N, N-Channel MOSFET

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low volt

FDN357N Features

* 1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance an