FDN352AP Datasheet (Fairchild Semiconductor)

FDN352AP, PowerTrench MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for low voltage and batte

FDN352AP Features

* 1.3 A,

* 30V

* 1.1 A,

* 30V RDS(ON) = 180 mΩ @ VGS =

* 10V RDS(ON) = 300 mΩ @ VGS =

* 4.5V

* High performance trench technology for extremely low RDS(ON).

* High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 w