FDN336P Datasheet (ON Semiconductor)

FDN336P, P-Channel MOSFET

This P *Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electron

FDN336P Features

* 1.3 A,

* 20 V

* RDS(on) = 0.20 W @ VGS =

* 4.5 V

* RDS(on) = 0.27 W @ VGS =

* 2.5 V

* Low Gate Charge (3.6 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* SUPERSOTTM

* 3 Provides Low R