The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOSFET – N-Channel, Logic Level, POWERTRENCH)
60 V, 1.6 A, 98 mW
FDN5632N-F085
Features
• RDS(on) = 98 mW at VGS = 4.5 V, ID = 1.6 A • RDS(on) = 82 mW at VGS = 10 V, ID = 1.7 A • Typ Qg(TOT) = 9.2 nC at VGS = 10 V • Low Miller Charge • UIS Capability • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
• DC/DC Converter • Motor Drives
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGS ID
Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10 V) Pulsed
60
V
±20
V
1.
FDN5632N-F085 Datasheet
