FDN302P
Description
This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V
- 12V)
2.Features
VDS (V)=-20V ID=-2.4A RDS(ON)=55mΩ(VGS=-4.5V) RDS(ON)=80mΩ(VGS=-2.5V)
3.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
1 2
4.Maximum ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (Note 1a)
- Pulsed Maximum Power Dissipation(Note 1a)
(Note 1b) Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Case (Note 1)
Symbol VDSS VGSS ID
PD TJ, TSTG
RθJA RθJC
Value -20 ±12 -2.4 -10 0.5 0.46
-55 to 150
Units V V A
W °C
°C/W
°C/W
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
1 of 8
.umw-ic.
UMW FDN302P
P-Channe I MOSFET
5.Static Electrical Characteristics (TA= 25°C Unless Otherwise...
