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FDN360P - P-Channel MOSFET

Description

This P Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 2 A,.
  • 30 V.
  • RDS(ON) = 80 mW @ VGS =.
  • 10 V.
  • RDS(ON) = 125 mW @ VGS =.
  • 4.5 V.
  • Low Gate Charge (6.2 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power Version of Industry Standard SOT.
  • 23 Package. Identical Pin.
  • Out to SOT.
  • 23 with 30% Higher Power Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant SOT.
  • 23 CASE 52.

📥 Download Datasheet

Datasheet Details

Part number FDN360P
Manufacturer onsemi
File Size 281.29 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN360P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN360P General Description This P−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • −2 A, −30 V ♦ RDS(ON) = 80 mW @ VGS = −10 V ♦ RDS(ON) = 125 mW @ VGS = −4.5 V • Low Gate Charge (6.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power Version of Industry Standard SOT−23 Package.
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