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FDN86501LZ - N-Channel MOSFET

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A.
  • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 60 V, 2.6 A, 116 mW FDN86501LZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A • Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.
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