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PMPB29XPE
20 V, single P-channel Trench MOSFET
5 December 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • 2.3 kV ESD protected • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management
1.4 Quick reference data
Table 1.
PMPB29XPE Datasheet
