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PMPB29XNE - single N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • 1 kV ESD protection.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated, 100% solderable side pads for optical solder inspection 3.

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Datasheet Details

Part number PMPB29XNE
Manufacturer NXP
File Size 256.62 KB
Description single N-channel Trench MOSFET
Datasheet download datasheet PMPB29XNE Datasheet
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DFN2020MD-6 PMPB29XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • 1 kV ESD protection • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated, 100% solderable side pads for optical solder inspection 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 4. Quick reference data Table 1.
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