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PMPB215ENEA - single N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated 100 % solderable side pads for optical solder inspection.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PMPB215ENEA
Manufacturer NXP
File Size 233.31 KB
Description single N-channel Trench MOSFET
Datasheet download datasheet PMPB215ENEA Datasheet
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DFN2020MD-6 PMPB215ENEA 80 V, single N-channel Trench MOSFET 18 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
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