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PMPB11EN
MD -6
30 V N-channel Trench MOSFET
Rev. 1 — 16 May 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF
N2
020
1.2 Features and benefits
Trench MOSFET technology Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management
1.4 Quick reference data
Table 1.
PMPB11EN Datasheet
