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PMPB15XP - single P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • 1.5 kV ESD protection (human body model).
  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated 100 % solderable side pads for optical solder inspection 1.3.

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Datasheet preview – PMPB15XP

Datasheet Details

Part number PMPB15XP
Manufacturer NXP
File Size 249.76 KB
Description single P-channel Trench MOSFET
Datasheet download datasheet PMPB15XP Datasheet
Additional preview pages of the PMPB15XP datasheet.

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Full PDF Text Transcription

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PMPB15XP 19 July 2012 12 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 1.5 kV ESD protection (human body model) • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.
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