PMPB20EN
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
N2
1.2 Features and benefits
- Trench MOSFET technology
- Very fast switching
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables
- Hard disk and puting power management
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 7 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20
- Typ 16.5
Max 30 20 10.4 19.5
Unit V V A mΩ
Static characteristics
[1]...
