Datasheet4U Logo Datasheet4U.com

PMPB27EP - MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated 100 % solderable side pads for optical solder inspection 1.3.

📥 Download Datasheet

Datasheet preview – PMPB27EP

Datasheet Details

Part number PMPB27EP
Manufacturer NXP Semiconductors
File Size 248.15 KB
Description MOSFET
Datasheet download datasheet PMPB27EP Datasheet
Additional preview pages of the PMPB27EP datasheet.

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors

Full PDF Text Transcription

Click to expand full text
PMPB27EP 10 September 2012 30 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 1.4 Quick reference data Table 1.
Published: |