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PMPB14XN
40 V, N-channel Trench MOSFET
11 March 2020
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Very fast switching • Low threshold voltage • Trench MOSFET technology • Side wettable flanks for optical solder inspection • Exposed drain pad for excellent thermal conduction
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data
Table 1.