PMPB10EN
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench Superjunction Technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Side wettable flanks for optional solder inspection
3. Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables
- Hard disk and puting power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 9 A; Tj = 25 °C
Min Typ Max
- - 30
-20
- 20
[1]
- - 14
- 10 12
[1] Device mounted on an FR4 Printed-Circuit Board (PCB),...
