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PMPB100ENE - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Extended temperature range Tj = 175 °C.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Tin-plated 100 % solderable side pads for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Trench MOSFET technology 3.

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Datasheet preview – PMPB100ENE

Datasheet Details

Part number PMPB100ENE
Manufacturer nexperia
File Size 316.83 KB
Description N-channel MOSFET
Datasheet download datasheet PMPB100ENE Datasheet
Additional preview pages of the PMPB100ENE datasheet.

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Full PDF Text Transcription

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PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Trench MOSFET technology 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
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