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PMPB10XNE
20 V, single N-channel Trench MOSFET
30 November 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • 2.2 kV ESD protection • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated, 100% solderable side pads for optical solder inspection
1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management
1.4 Quick reference data
Table 1.
PMPB10XNE Datasheet
