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PMPB14R0EP
30 V, P-channel Trench MOSFET
13 October 2020
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic-level compatible • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction
3. Applications
• Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Computing power management
4. Quick reference data
Table 1.
PMPB14R0EP Datasheet
