Click to expand full text
PMPB14R8XN
30 V, N-channel Trench MOSFET
24 October 2022
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction
3. Applications
• Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management
4. Quick reference data
Table 1.
PMPB14R8XN Datasheet
