PBSS5350TH
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (h FE) at high IC
- Higher efficiency leading to less heat genereation
- High temperature applications up to 175 °C
- AEC-Q101 qualified
3. Applications
- Power management
- DC-to-DC conversion
- Supply line switches
- Battery charger switches
- Peripheral drivers
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current ICM peak collector current
RCEsat collector-emitter saturation resistance
Conditions open base pulsed single pulse; tp < 1 ms IC = -2 A; IB = -200 m A; Tamb = 25 °C
[1] Pulse conditions: pulse width tp ≤ 100...
