Download PBSS5350S Datasheet PDF
NXP Semiconductors
PBSS5350S
FEATURES - High power dissipation (830 m W) - Ultra low collector-emitter saturation voltage - 3 A continuous current - High current switching - Improved device reliability due to reduced heat generation APPLICATIONS - Medium power switching and muting - Linear regulators - DC/DC convertor - Supply line switching circuits - Battery management applications - Strobe flash units - Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN plement: PBSS4350S. MARKING TYPE NUMBER PBSS5350S MARKING CODE S5350S Fig.1 1 handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. - 50 - 3 - 5 <150 UNIT V A A mΩ 2 3 2 1 3 MAM285 Simplified outline (SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC...