PBSS5350T
FEATURES
- Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
- High collector current capability
- High collector current gain
- Improved efficiency due to reduced heat generation. APPLICATIONS
- Power management applications
- Low and medium power DC/DC convertors
- Supply line switching
- Battery chargers
- Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package. NPN plement: PBSS4350T. MARKING TYPE NUMBER PBSS5350T Note 1.
- = p: Made in Hong Kong.
- = t: Made in Malaysia.
- = W: Made in China. ORDERING INFORMATION PACKAGE TYPENUMBER NAME PBSS5350T
- DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZD-
Top view handbook, halfpage
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION
PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX.
- 50
- 2
-...
