PBSS5350D
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4350D
1.2 Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High current capability
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- Supply line switching circuits
- Battery management applications
- DC-to-DC conversion
1.4 Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data
Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance
Conditions open base
IC = -2 A; IB = -200 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -50 V
- - -3 A
- - -5 A
- 120 150 mΩ
NXP Semiconductors
50 V, 3 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5...
