PBSS5350SS
description
PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Package NXP PBSS5350SS SOT96-1 Name SO8 NPN/PNP plement PBSS4350SPN NPN/NPN plement PBSS4350SS
Type number
1.2 Features
I I I I I
..
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (h FE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans) I Automotive
1.4 Quick reference data
Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC =
- 2 A; IB =
- 200 m A
[1]
Symbol Parameter Per transistor VCEO IC ICM RCEsat
[1]
Min
- Typ 95
Max
- 50
- 2.7
- 5 140
Unit V A A mΩ collector-emitter voltage collector current peak collector current collector-emitter saturation...
