PBSS5350Z-Q
description
PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS4350Z-Q
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (h FE) at high IC
- High energy efficiency due to less heat generation
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- DC/DC converters
- Supply line switching
- Battery charger
- LED backlighting
- Linear voltage regulation (LDO)
- Driver in low supply voltage applications, e.g. lamps, LEDs
- Inductive load driver (for example relays, buzzers, motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VCEO collector-emitter voltage open base
IC ICM RCEsat collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter
IC = -2 A; IB = -200 m A; Tamb = 25 °C [1] saturation...
