PBSS5350SS
description
PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
Nexperia PBSS5350SS SOT96-1
Name SO8
NPN/PNP plement
PBSS4350SPN
NPN/NPN plement
PBSS4350SS
1.2 Features
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (h FE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans) I Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO IC ICM collector-emitter voltage collector current peak collector current
RCEsat collector-emitter saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions open base single pulse; tp ≤ 1 ms IC =
- 2 A; IB =
- 200 m A
Min Typ...
