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GANB012-040CBA Datasheet bi-directional Gallium Nitride FET

Manufacturer: Nexperia

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General Description

The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

It is a normally-off emode device offering superior performance.

2.

Overview

WLCSP12 GANB012-040CBA 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 12 March 2025 Product data sheet 1.

Key Features

  • Enhancement mode - normally-off power switch.
  • Bi-directional device.
  • Ultra high switching speed capability.
  • Ultra-low on-state resistance.
  • RoHS, Pb-free, REACH-compliant.
  • High efficiency and high power density.
  • Wafer Level Chip-Scale Package (WLCSP) 1.2 mm x 1.7 mm 3.

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