GAN111-650WSB Datasheet Gallium Nitride (GaN) FET

Manufacturer: Nexperia

GAN111-650WSB gallium nitride (gan) fet by Nexperia - Datasheet Preview

Datasheet Details

Part number	GAN111-650WSB
Manufacturer	Nexperia
File Size	390.86 KB
Description	Gallium Nitride (GaN) FET
Datasheet	GAN111-650WSB Datasheet

General Description

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package.

It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Overview

TO-247-3L GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package 24 June 2024 Product data sheet 1.

Key Features

Ultra-low reverse recovery charge.
Simple gate drive (0 V to +10 V or +12 V).
Robust gate oxide (±20 V capability).
High gate threshold voltage (+4 V) for very good gate bounce immunity.
Very low source-drain voltage in reverse conduction mode.
Transient over-voltage capability 3.

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