GAN039-650NBB Datasheet Gallium Nitride (GaN) FET

Manufacturer: Nexperia

GAN039-650NBB gallium nitride (gan) fet by Nexperia - Datasheet Preview

Datasheet Details

Part number	GAN039-650NBB
Manufacturer	Nexperia
File Size	521.26 KB
Description	Gallium Nitride (GaN) FET
Datasheet	GAN039-650NBB Datasheet

General Description

The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package.

It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Overview

CCPAK1212 GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package 28 May 2024 Product data sheet 1.

Key Features

Simplified driver design as standard level MOSFET gate drivers can be used:.
0 V to 12 V drive voltage.
Gate threshold voltage VGSth of 4 V.
Robust gate oxide with ±20 V VGS rating.
High gate threshold voltage of 4 V for gate bounce immunity.
Low body diode Vf for reduced losses and simplified dead-time adjustments.
Transient over-voltage capability for increased robustness.
CCPAK package technology:.
Improved reli.

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