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GAN041-650WSB Datasheet GaN FET

Manufacturer: Nexperia

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General Description

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package.

It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2.

Overview

GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package 12 January 2021 Product data sheet 1.

Key Features

  • Ultra-low reverse recovery charge.
  • Simple gate drive (0 V to +10 V or 12 V).
  • Robust gate oxide (±20 V capability).
  • High gate threshold voltage (+4 V) for very good gate bounce immunity.
  • Very low source-drain voltage in reverse conduction mode.
  • Transient over-voltage capability 3.

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