Datasheet4U Logo Datasheet4U.com

GAN063-650WSA Datasheet GaN FET

Manufacturer: Nexperia

📥 Download Datasheet

General Description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET.

It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2.

Overview

GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET 20 March 2020 Product data sheet 1.

Key Features

  • Ultra-low reverse recovery charge.
  • Simple gate drive (0 V to +10 V or 12 V).
  • Robust gate oxide (±20 V capability).
  • High gate threshold voltage (+4 V) for very good gate bounce immunity.
  • Very low source-drain voltage in reverse conduction mode.
  • Transient over-voltage capability (800 V) 3.

More Datasheets from Nexperia

Part Number Description
GAN039-650NBB Gallium Nitride (GaN) FET
GAN039-650NBBA GaN FET
GAN039-650NTB Gallium Nitride (GaN) FET
GAN041-650WSB GaN FET
GAN080-650EBE GaN FET
GAN111-650WSB Gallium Nitride (GaN) FET
GAN140-650EBE GaN FET
GAN140-650FBE GaN FET
GAN190-650EBE GaN FET
GAN190-650FBE GaN FET