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GAN039-650NTB - Gallium Nitride (GaN) FET

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General Description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package.

It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

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Overview

CCPAK1212i GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package 5 December 2023 Product data sheet 1.

Key Features

  • Simplified driver design as standard level MOSFET gate drivers can be used:.
  • 0 V to 12 V drive voltage.
  • Gate threshold voltage VGSth of 4 V.
  • Robust gate oxide with ±20 V VGS rating.
  • High gate threshold voltage of 4 V for gate bounce immunity.
  • Low body diode Vf for reduced losses and simplified dead-time adjustments.
  • Transient over-voltage capability for increased robustness.
  • CCPAK package technology:.
  • Improved reli.

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