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GAN190-650FBE Datasheet GaN FET

Manufacturer: Nexperia

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General Description

The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm surface mount package.

It is a normally-off e-mode device offering superior performance.

2.

Overview

DFN5060-5 GAN190-650FBE 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package 19 April 2023 Product data sheet 1.

Key Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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