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WPM3022 - MOSFET

General Description

The WPM3022 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • D S G SOT-23 D 3 12 GS Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23.

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Datasheet Details

Part number WPM3022
Manufacturer WillSEMI
File Size 806.37 KB
Description MOSFET
Datasheet download datasheet WPM3022 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM3022 Single P-Channel, -30V, -3.1A, Power MOSFET WPM3022 Http://www.sh-willsemi.com VDS (V) -30 Typical RDS(on) (mΩ) 56 @ VGS=-10V 77 @ VGS=-4.5V Descriptions The WPM3022 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3022 is Pb-free.