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WPM3012 - MOSFET

General Description

The WPM3012 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 3 W32.
  • 12 W32= Device Code.
  • = Month (A~Z) Marking.

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Datasheet Details

Part number WPM3012
Manufacturer WillSEMI
File Size 114.95 KB
Description MOSFET
Datasheet download datasheet WPM3012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.058@ VGS=10V 0.080@ VGS=4.5V Descriptions The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3012 is Pb-free and Halogen-free. WPM3012 Http//:www.willsemi.com SOT-23 D 3 12 GS Pin configuration (Top view) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 3 W32* 12 W32= Device Code * = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc.