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WPM3005 - MOSFET

General Description

The WPM3005 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-3L SOT-23-3L D 3 12 GS Pin configuration (Top view) 3 W35.
  • 12 W35= Device Code.
  • = Month (A~Z).

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Datasheet Details

Part number WPM3005
Manufacturer WillSEMI
File Size 762.18 KB
Description MOSFET
Datasheet download datasheet WPM3005 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET WPM3005 Http://www.sh-willsemi.com VDS (V) -30 Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V 0.083@ VGS=̢4.5V 0.083@ VGS=̢4.5V Descriptions The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3005 is Pb-free and Halogen-free.