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WPM3410 - Single P-Channel Power MOSFET

General Description

The WPM3410 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package DFN2X2-6L.

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Datasheet Details

Part number WPM3410
Manufacturer WillSEMI
File Size 847.12 KB
Description Single P-Channel Power MOSFET
Datasheet download datasheet WPM3410 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM3410 Single P-Channel, -30V, -5.4A, Power MOSFET VDS (V) -30 Typical RDS(on) (mΩ) 32 @ VGS=-10V 49 @ VGS=-4.5V WPM3410 http://www.omnivision-group.com/ Descriptions The WPM3410 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3410 is Pb-free.