WPM3015 - MOSFET

WillSEMI

General Description

The WPM3015 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
Small package TSOT-23-3L.

📥 Download Datasheet

WPM3015 mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WPM3015
Manufacturer	WillSEMI
File Size	1.13 MB
Description	MOSFET
Datasheet	WPM3015 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM3015 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Typical Rds(on)(Ω ) 0.063@ VGS=-10V 0.091@ VGS=-4.5V WPM3015 www.sh-willsemi.com Descriptions The WPM3015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3015 is Pb-free and Halogen-free. TSOT-23-3L D 3 12 GS Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package TSOT-23-3L Applications Pin configuration (Top view) 3 W15* 12 W15= Device Code * = Month Marking  Driver for Relay, Solenoid, Motor, LED etc.