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WPM3004 - MOSFET

General Description

The WPM3004 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • SOP-8L DD 87 DD 65 12 SS 34 SG Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L.

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Datasheet Details

Part number WPM3004
Manufacturer WillSEMI
File Size 450.09 KB
Description MOSFET
Datasheet download datasheet WPM3004 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.053@ VGS=̢10.0V 0.053@ VGS=̢10.0V 0.079@ VGS=̢4.5V 0.079@ VGS=̢4.5V WPM3004 Http//:www.willsemi.com Descriptions The WPM3004 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3004 is Pb-free. Features SOP-8L DD 87 DD 65 12 SS 34 SG Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc.