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WNMD2173 - Dual N-Channel MOSFET

General Description

The WNMD2173 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package CSP 4L MOSFET1 Gate 1 MOSFET2 Gate 2 Gate Protection Diode Source 1 Body Diode CSP 4L Source 2 43 73 YW 12 1: Source 1 2: Gate 1 3: Gate 2 4: S.

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Datasheet Details

Part number WNMD2173
Manufacturer Will Semiconductor
File Size 1.73 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2173 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2173 WNMD2173 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (mΩ) 26@ VGS=4.5V 27@ VGS=4.0V 20 30@ VGS=3.1V 33@ VGS=2.5V ESD Rating:2000V HBM Descriptions The WNMD2173 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The WNMD2173 is available in CSP 4L package. Standard Product WNMD2173 is Pb-free and Halogen-free.