WNMD2172 - Dual N-Channel MOSFET

Will Semiconductor

General Description

The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Key Features

WNMD2172 Http//:www. sh-willsemi. com TSSOP-8L D1/D2 S2 S2 G2 8 76 5 12 34 D1/D2 S1 S1 G1 Pin configuration (Top view) 87 65.
Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
Small package TSSOP-8L.

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WNMD2172 dual n-channel mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNMD2172
Manufacturer	Will Semiconductor
File Size	1.29 MB
Description	Dual N-Channel MOSFET
Datasheet	WNMD2172 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNMD2172 Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 0.017@ VGS=3.1V 0.018@ VGS=2.5V 0.021@ VGS=1.8V The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2172 is Pb-free and Halogen-free. Features WNMD2172 Http//:www.sh-willsemi.