VBT3080S - Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 1 VT3080S PIN 1 PIN 2 CASE 3 1 VFT3080S PIN 1 PIN 2 2 3.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in PIN 3.

Vishay

Part number	VBT3080S
Manufacturer	Vishay
File Size	205.62 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	VBT3080S Datasheet
Additional preview pages of the VBT3080S datasheet.

VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VBTA1220N - N-Channel MOSFET (VBsemi)
VBTA1220NS - N-Channel MOSFET (VBsemi)
VBTA7322 - N-Channel MOSFET (VBsemi)

Other Datasheets by Vishay

Click to expand full text

New Product VT3080S, VFT3080S, VBT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Published: Mar 28, 2012 |