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VBT3045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5 A
FEATURES
TMBS®
TO-263AB
K
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
• TJ 200 °C max. in solar bypass application • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
1
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTCS
IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) 30 A 45 V 200 A 0.
VBT3045BP Datasheet
