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VBT3045BP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5 A
TMBS®
TO-263AB
K
PIN 1 PIN 2
2 1
K HEATSINK
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C • TJ 200 °C max. in solar bypass application • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTCS
Package
TO-263AB
IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max.
VBT3045BP-M3 Datasheet
