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VBT3045CBP-E3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5.0 A
TMBS ®
TO-263AB
K
2 1
VBT3045CBP
PIN 1
K
PIN 2
HEATSINK
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass mode application • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM VF at IF = 15 A TOP max. (AC mode) TJ max.
VBT3045CBP-E3 Datasheet
