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www.vishay.com
VBT3045CBP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5.0 A
TMBS ®
D2PAK (TO-263AB)
K
2
1 VBT3045CBP
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM IFSM
45 V 200 A
VF at IF = 15 A
0.39 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current) Package
Circuit configuration
200 °C D2PAK (TO-263AB) Common cathode
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C • TJ 200 °C max.
VBT3045CBP-M3 Datasheet
