VBT3060C Datasheet PDF (Dual High Voltage Trench MOS Barrier Schottky Rectifier)

VBT3060C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	VBT3060C
Manufacturer	Vishay
File Size	151.89 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT3060C Datasheet
Additional preview pages of the VBT3060C datasheet.

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Full PDF Text Transcription

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www.vishay.com VT3060C, VFT3060C, VBT3060C, VIT3060C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.

Published: Feb 5, 2016 |