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P0903BVA
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID 13A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TA = 25 °C TA = 70 °C
ID
IDM IAS
13 10 80 30
Avalanche Energy
L =0.1mH
EAS
45
Power Dissipation
TA= 25 °C TA =70 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2.3 1.5 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
55
Junction-to-Case
RqJC
3.7
1Pulse width limited by maximum junction temperature.
P0903BVA Datasheet
